Application: Depositing thin films below several micrometers on the sample surface by sputtering, which can be used to prepare various metals, semiconductors, ferromagnetic materials, insulating oxides, ceramics and other materials.
Main specifications: 6 targets can be sputtered in sequence; Splashing of two targets at the same time; Splashing range is within 4 inches; Vacuum degree 8 × -8 torr, thickness uniformity error<± 5%, and sputtering number of microns or less.
Applicable chip size: sample size shall not be greater than 6 inches;
Splashable materials: metal like Al, Cu, Gr, Co, Fe, Ni, Pt, Ag, Ti, Ta; Alloy NiFe, CoFe, CoFeB, NiMn, FeMn, TbFeCo; Oxide MgO, etc.
Chip sample size | ≤6 inch |
Vacuum degree | 8 × 10-8Toor |
Thickness uniformity error | <5% |
Sputtering thickness | 0-300nm |
Sputter material | Al、Cu、Gr、Co、Fe、Ni、Pt、Ag、TiO2、NiFe、NiMn... |
Size | 170cm*130*180cm |
Depositing thin films below several micrometers on the sample surface by sputtering can prepare various metals, semiconductors, ferromagnetic materials, insulating oxides, ceramics and other materials
