Purpose: Step by step lithography can reduce the scale of mask pattern and transfer it to the substrate surface to be exposed.

Main specifications: the mask pattern can be reduced by 5 times in the same proportion for exposure; Linewidth: up to 500nm; A variety of models of positive and negative photoresist can be used together;

Applicable chip size: the sample size cannot be greater than 6 inches.

Splashable materials: metal like Al, Cu, Gr, Co, Fe, Ni, Pt, Ag, Ti, Ta; Alloy NiFe, CoFe, CoFeB, NiMn, FeMn, TbFeCo; Oxide MgO, etc.

Size: 170 cm * 130 cm * 180 cm

Product features:

High accuracy;

Desktop type, small size, built-in computer;

Customizable hardware and software to meet the needs of the industry;

Elasticity is applicable to various substrates and shapes;

Application field:

Small and medium scale integrated circuit;

Semiconductor components;

Development and production of SAW devices;

Detailed parameters: